| PART |
Description |
Maker |
| APT1002R4BN APT1002RBN |
POWER MOS IV 1000V 7.0A 2.00 Ohm / 1000V 6.5A 2.40 Ohm
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
| APT1001R1AVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs
POWER MOS V 1000V 9A 1.100 Ohm
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
|
| APT1001R1BVFR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 1000V 11A 1.100 Ohm
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
|
| APT10086BVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 1000V 13A 0.860 Ohm
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| APT10086BVFR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 1000V 13A 0.860 Ohm
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| APT10040B2VR APT10040LVR |
POWER MOS V 1000V 25A 0.400 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Advanced Power Technology, Ltd.
|
| APT10090BLL APT10090SLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
POWER MOS 7 1000V 12A 0.900 Ohm
|
Advanced Power Technology Ltd.
|
| APT10050JLC |
POWER MOS VI 1000V 19A 0.500 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
|
Advanced Power Technology Ltd.
|
| STU6NA100 6003 |
N - CHANNEL 1000V - 1.45ohm - 6A - Max220 FAST POWER MOS TRANSISTOR
From old datasheet system
N - CHANNEL 1000V - 1.45 - 6A - Max220 FAST POWER MOS TRANSISTOR
|
STMICROELECTRONICS[STMicroelectronics]
|
| APT1004R2BN APT1004RBN |
Circular Connector; No. of Contacts:32; Series:; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:18; Circular Contact Gender:Socket; Circular Shell Style:Box Mount Receptacle; Insert Arrangement:18-32
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
POWER MOS IV 1000V 4.4A 4.00 Ohm / 1000V 4.0A 4.20 Ohm
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| APT1002RCN |
POWER MOS IV 1000V 5.5A 2.00 Ohm
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
| STU6NA100 |
N - CHANNEL 1000V - 1.45W - 6A - Max220, FAST POWER MOS TRANSISTOR
|
SGS Thomson Microelectronics
|
